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The hard mask typically consists of a PECVD silicon nitride layer, if necessary with a pad of oxide underneath. Care must be taken to minimize the pinhole density for the subsequent anisotropic wet etching step. The etch mask is patterned using a double side mask aligner, aligning the patterns on the wafer back to front side structures.

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Using synchrotron radiation, the pattern of the intermediate mask is transferred into an approximately 20 m thick resist layer, which after development serves as the mold for gold electro deposition. The mask produced in this way which has sufficiently high absorber thickness, is called a process mask.

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